Influence of Dipolar Additives on Polaron Binding Energy in Polysilane Composites

Amorphous silicon is a good semiconductive material for many applications. It is a member of the large class of silicon compounds which comprise silicon clusters, silane oligomers, poly(siloxanes), and poly(silanes). The last mentioned polymers are of considerable interest because of their unusual electrical and photoelectrical properties. It has been shown that in these polymers the effect of σ-electron delocalization is strong and charge carrier transport can proceed along the Si backbone. Because of high charge mobility these polymers are suitable for the preparation of electrically active composites. In this paper we report the influence of dipolar species on charge carrier mobility in polysilane composites. The decrease of the mobility is mainly caused by the increase of deformation energy of polysilane backbone. This problem is discussed as well.